Structural transformations in diamond at ion implantation

Structural transformations in diamond at ion implantation

Classified abstracts 495-509 deviations are calculated for B, N, Al, P, Ga, As, In and Sb ions implants with energy ranging from 20 to 200 keV into s...

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Classified abstracts 495-509

deviations are calculated for B, N, Al, P, Ga, As, In and Sb ions implants with energy ranging from 20 to 200 keV into silicon. A Golanski, Nukleonika, 18 (8), 1973, 335-350 (in Polish). 16 495. Ion implantation. II. Investigation of distribution of effective ranges

of

phosphorus

ions

implanted

into

single

crystal

silicon.

(Poland) Using the method of activation analysis, the distributions of concentration of phosphorus atoms, implanted into single crystal silicon with energy of 16 to 60 keV, were measured. The disagreement between the experimental data and theoretical results is discussed. A Golanski Polish).

and R Dybczynski,

496. Phase transformations bardment. (USSR)

Nukleonika,

18 (8), 1973, 351-360

(in

16 under the action of ion bom-

in diamond

Using the method of measurement of total conductivity of the layer during the process of ion implantation, structural transformations of diamond, caused by ion bombardment, are investigated. V V Galkin et al. Phvs Proc in Crvst 142-150 (in Russian).497.

Structural

transformations

with Defects. ”

in diamond

at

I Coil. , Kiev 1972. ion

16 implantation.

(USSR) Using the method of reflection high-energy electron diffraction, accumulation of radiation defects, amorphization and graphitization in diamond are investigated at its bombardment by argon ions with an energy of 40 keV and doses ranging from 6 x lOI3 to 2.4 x 1Ol5 cme2. V S Vavilov et al, Struct 231-234 (in Russian).

Defects

in Semicon,

498. Investigation of defects in ion-implanted methods. (USSR)

Coil, Novosibirsk

1973,

16 silicon by electrochemical

Depth distribution of recombination centres, introduced into n-Si by bombardment with 50 keV N+ and Ar+ ions, was determined using the methods of measurement of surface photo-emf during the process of electrochemical dissolution of Si. P V Pavlov et al, Struct 251-254 (in Russian).

Defects

in Semicon,

CON, Novosibirsk

1973,

16 499. The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysicul properties of silicon doped by implantation of boron and phosphorus. (USSR)

The dependence of electrical conductivity, concentration and mobility of charge carriers on the density of ion current and target temperature is investigated at implantation of boron and phosphorus ions into silicon. The dependence of concentration of stable radiation defects on ion current density and target temperature is given. V K Vasilev et al, Struct 247-250 (in Russian).

Defects

in Semicon,

Coil, Novosibirsk

1973,

16 500. Changes in properties of silicon due to irradiation by heavy charged particles. (USSR)

The spectra of impurity photoconductivity and electrical conductivity are investigated in silicon irradiated with protons, deuterons and alpha-particles in dependence on the particle flow. Experimental results are discussed. T I Kolomenskaya and N V Kuznetsov, Struct Coil, Novosibirsk 1973, 259-262 (in Russian).

Defects

in Semicon, 16

501. Nature of defects in silicon implanted with boron ions. (USSR)

Using the methods of transmission electron microscopy and X-ray topography, structural changes in n-Si with various concentration of dislocations and doped with P are investigated after implantation with boron ions. Annealing of implanted layers has been performed at 600 and 800°C in argon and in the vacuum chamber of an electron microscope. T P Timasheca et al, Struct 1973, 274-277 (in Russian). 502. Concentration

pro&s

Defects

in Semicon,

of implanted

phosphorus

Co& Novosibirsk 16 in silicon. (Ger-

many) Using the methods of neutron activation analysis, secondary-ion 174

mass

spectrometry and localization of generated p-n junctions, the depth distribution of implanted boron atoms in Si was determined. The implantation of 50 keV ‘lP ions into Si at an angle of 8” with the direction was carried out at room temperature and at 450°C. F Burkhardt et al, Phys Stat Sol (a), 22 (l), 1974, K45-K47. 16 503. EPR of conduction electrons produced in silicon by hydrogen ion implantation. (Germany) Using the results of electron paramagnetic resonance measurements, it is proposed that implantation of H+ and D+ ions into silicon at relative low temperatures forms atom bonds of the tape Si-H, associated with radiation defect centres which produce shallow donors. At annealing temperatures of approximately 500°C such bonds begin to break. (USSR) Yu V Gorelkinskiy et al, Phys Stat Sol (a), 22 (1), 1974, K55-K57. 16 504. Nature of dislocation loops, induced in silicon during the process of phosphorus ion implantation and subsequent annealing. (USSR) Using an electron microscope, structure of defects is investigated in single crystal Si, cut along the (111) plane, subjected to phosphorus ion implantation at room temperature and recrystallization annealed at 1150°C in oxidizing atmosphere. The layer 0.5 to 0.8 pm in depth contained dislocation grids or separated dislocation loops and package defects. S K Maksimov et al, Struct Defects in Semicon, CON, Novosibirsk 1973, 227-230 (in Russian). 16 505. Proton backscattering investigation of deformed layers formed at treatment of surface of semiconductor materials. (USSR)

It is experimentally shown that the energy spectrum of protons backscattered from single crystal semiconductor materials in the direction of close packed crystallographic axes gives quantitative information on the thickness and degree of deformation of surface layers deformed at treatment of semiconductor materials. V P Alekhin et al. Struct 166-169 (in Russian).

Defects ”

in Semicon. ,~CON.I Novosibirsk

506. The influence of defects produced by ion bombardment bution and electrical activity of impurity atoms. (USSR)

1973,

16 on distri-

The questions connected with the influence of defects, produced by ion bombardment, on distribution of implanted atoms during irradiation and annealing are considered. The influence of radiation defects on electrical activity of impurity atoms is investigated. It is found that amorphization markedly influences electrophysical characteristics of implanted layers, especially after annealing in the temperature interval of 550 to 650°C. Properties of the layers, annealed at higher temperatures, are less sensitive to the degree of disordering of lattice. V M Zelexvinskaya et al, Struct Defects 1973, 235-238 (in Russian). 507. Some features of amorphization bombardment. (USSR)

in Semicon,

Coil, Novosibirsk

16 of germanium and diamond by ion

Using the method of electron diffraction, thickness of amorphized layers generated on germanium and diamond by 50 keV ion bombardment is investigated in dependence on irradiation dose and kind of ions. A I Gerasimov et al, Strut 219-222 (in Russian).

Defects

in Semicon,

Coil, Novosibirsk

1973,

16 of structural changes in n-type silicon after boron ion implantation. (USSR) El&on-microscopical investigations show.that at 40 keV boron ion implantation and annealing at 650°C the decay of solid solution of boron in silicon occurs. T P Timasheva et al. Proc of 9th All-Union Conf on Electron Micro-

508. Electron-microscopical

scopy,

investigation

Tbilisi 1973, 246-247 iin Russian).

_ 16

509. The effect of fast electron irradiation

on surface properties of

germanium. (USSR) Changes of surface electrostatic potential caused by 3.5 MeV electron irradiation of high-ohmic and low-ohmic p- and n-type germanium samples with and without protective coating are investigated. V V Bolotov et al, Izv AN Latv SSR Ser Fiz Tekh Nauk, No 5, 1973, 50-53 (in Russian).